A COMPARATIVE-STUDY OF SINGLE-ELECTRON MEMORIES

Authors
WASSHUBER C KOSINA H SELBERHERR S
Citation
C. Wasshuber et al., A COMPARATIVE-STUDY OF SINGLE-ELECTRON MEMORIES, I.E.E.E. transactions on electron devices, 45(11), 1998, pp. 2365-2371
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
11
Year of publication
1998
Pages
2365 - 2371
Database
ISI
SICI code
0018-9383(1998)45:11<2365:ACOSM>2.0.ZU;2-3
Abstract
We study different memory cell designs and compare their advantages an d disadvantages from an engineering point of view. We look at operatio nal stability as a function of temperature and stray charge (random ba ckground charge), and discuss the issue of reliable mass production. W e conclude that memories seem to be one of the most promising large sc ale single-electron tunnel applications, that lie, particularly when g ranular films are used, already in the range of today's process techno logy.