SWITCH-OFF BEHAVIOR OF FLOATING-BODY PD SOI MOSFETS

Authors
PERRON LM HAMAGUCHI C LACAITA AL MAEGAWA S YAMAGUCHI Y
Citation
Lm. Perron et al., SWITCH-OFF BEHAVIOR OF FLOATING-BODY PD SOI MOSFETS, I.E.E.E. transactions on electron devices, 45(11), 1998, pp. 2372-2375
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
11
Year of publication
1998
Pages
2372 - 2375
Database
ISI
SICI code
0018-9383(1998)45:11<2372:SBOFPS>2.0.ZU;2-Z
Abstract
In this brief, we report a detailed study of the switch-off transients of the drain current in floating-body partially depleted (PD) SOI MOS FET's, When operated in the kink region and at frequency in the MHz ra nge, floating body effects improve the current capability of these dev ices. However we point out a serious drawback, that has been previousl y overlooked: the same effects lead to orders of magnitude increase of the off-state Leakage current calling for a trade-off between speed a nd power dissipation.