A SIMPLE-MODEL FOR THRESHOLD VOLTAGE OF SURROUNDING-GATE MOSFETS

Authors
AUTH CP PLUMMER JD
Citation
Cp. Auth et Jd. Plummer, A SIMPLE-MODEL FOR THRESHOLD VOLTAGE OF SURROUNDING-GATE MOSFETS, I.E.E.E. transactions on electron devices, 45(11), 1998, pp. 2381-2383
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
11
Year of publication
1998
Pages
2381 - 2383
Database
ISI
SICI code
0018-9383(1998)45:11<2381:ASFTVO>2.0.ZU;2-A
Abstract
We propose a threshold voltage model for surrounding-gate MOSFET's, Th e model treats the ends and the double-gate regions of the channel as separate devices operating in parallel. The threshold voltage for the full device is obtained as the perimeter-weighted sum of the threshold voltages of the two parts enabling simple analytic threshold models t o be used, Short channel effects and drain-induced barrier towering ar e also modeled in this manner.