THE FORMATION OF AN INHOMOGENEOUS DISTRIBUTION OF OXYGEN IN CZ-SI CRYSTAL - AN INVESTIGATION WITH QUANTUM REACTION-DIFFUSION EQUATION

With a statistical partition function model for oxygen atoms at the in terface between the silicon crystal and melt during Czochralski silico n (CZ-Si) crystallisation, we research a dynamic reaction-diffusion pr ocess to analyse the nonequilibrium dynamical distribution of oxygen a toms in the silicon medium. The calculated results from the quantum re action-diffusion equation (QRDE) shows that the striations of oxygen c oncentration distribution observed in the experiment can be explained by such nonequilibrium dynamical reaction-diffusion processes. These r esults are suitable for understanding how the striations are related t o the physical conditions of a practical crystal growth process. (C) 1 998 Elsevier Science B.V. All rights reserved.