METHYLPENTACARBONYLMANGANESE AS ORGANOMETALLIC PRECURSOR FOR THE EPITAXIAL-GROWTH OF MANGANESE SELENIDE HETEROSTRUCTURES

Citation
P. Tomasini et al., METHYLPENTACARBONYLMANGANESE AS ORGANOMETALLIC PRECURSOR FOR THE EPITAXIAL-GROWTH OF MANGANESE SELENIDE HETEROSTRUCTURES, Journal of crystal growth, 193(4), 1998, pp. 572-576
Citations number
14
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
193
Issue
4
Year of publication
1998
Pages
572 - 576
Database
ISI
SICI code
0022-0248(1998)193:4<572:MAOPFT>2.0.ZU;2-W
Abstract
Methylpentacarbonylmanganese and diethylselenium have been pyrolyzed f or the organometallic chemical vapour deposition of manganese selenide thin films. Polycrystalline layers of manganese selenide exhibiting e ither rocksalt structure or both rocksalt and zincblende structure hav e been fabricated. The structure is related to substrate temperature. In addition, we report on the thermal stability of the methylpentacarb onylmanganese precursor. High cracking temperatures lead to the format ion of manganese oxide instead of breaking the manganese-carbon bond. Moreover, we point out that the formation of carbonylselenide might be a parasitic reaction when cracking simultaneously methylpentacarbonyl manganese and diethylselenium. (C) 1998 Elsevier Science B.V. All righ ts reserved.