GROWTH AND WETTING ANGLES AS THE CONTROL PARAMETERS OF CRYSTAL SHAPE IN CZOCHRALSKI METHOD

The growth angle and the wetting angle are parameters of crystal growt h process in Czochralski method. Theoretical and experimental data ana lyses for silicon and germanium show that there are no marked differen ces between the values of these parameters. The parameters are not fix ed during crystal pulling from melt. The hysteresis of the wetting ang les and the anisotropy of growth angles must be taken into account in describing the crystal growth process. (C) 1998 Elsevier Science B.V. All rights reserved.