ASSESSMENT OF OXIDE RELIABILITY AND HOT-CARRIER DEGRADATION IN CMOS TECHNOLOGY

Authors
MAES HE GROESENEKEN G DEGRAEVE R DEBLAUWE J VANDENBOSCH G
Citation
He. Maes et al., ASSESSMENT OF OXIDE RELIABILITY AND HOT-CARRIER DEGRADATION IN CMOS TECHNOLOGY, Microelectronic engineering, 40(3-4), 1998, pp. 147-166
Citations number
72
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
40
Issue
3-4
Year of publication
1998
Pages
147 - 166
Database
ISI
SICI code
0167-9317(1998)40:3-4<147:AOORAH>2.0.ZU;2-K
Abstract
The techniques and methodologies to be applied in R&D laboratories for the assessment of thin gate dielectrics reliability and hot carrier d egradation are reviewed. Examples are given on how the application of these techniques allows to obtain a better insight in the physics of t he degradation process. Two such examples are given related to the Die lectric breakdown of thin gate dielectrics and on the Stress-Induced L eakage Current in thin dielectrics.