ELECTROMIGRATION TESTING OF INTEGRATED-CIRCUIT INTERCONNECTIONS

Authors
FANTINI F LLOYD JR DEMUNARI I SCORZONI A
Citation
F. Fantini et al., ELECTROMIGRATION TESTING OF INTEGRATED-CIRCUIT INTERCONNECTIONS, Microelectronic engineering, 40(3-4), 1998, pp. 207-221
Citations number
47
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
40
Issue
3-4
Year of publication
1998
Pages
207 - 221
Database
ISI
SICI code
0167-9317(1998)40:3-4<207:ETOII>2.0.ZU;2-F
Abstract
The electromigration phenomenon has been one of the most intriguing ph ysical problems in the semiconductor device reliability. The models to explain the phenomenon are here revised, together with the influence of materials and their microstructure. The various measuring technique s are described, including the design of special test patterns, and st atistical data analysis is briefly reviewed.