OPTICAL CHARACTERIZATION OF LAYERS FOR SILICON MICROELECTRONICS

Authors
CHABLI A
Citation
A. Chabli, OPTICAL CHARACTERIZATION OF LAYERS FOR SILICON MICROELECTRONICS, Microelectronic engineering, 40(3-4), 1998, pp. 263-274
Citations number
29
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
40
Issue
3-4
Year of publication
1998
Pages
263 - 274
Database
ISI
SICI code
0167-9317(1998)40:3-4<263:OCOLFS>2.0.ZU;2-J
Abstract
The optical characterization techniques including multiple internal re flection, spectroscopic ellipsometry, X-ray specular reflectometry and Raman spectroscopy, are presented from the point of view of the silic on microelectronics. Practical examples are selected. The advantages a nd limitations of each techniques are shown. It is emphasized that rel iable results can be obtained by complementing these tools each other.