TOPOGRAPHY OF THE SILICON SURFACE BOMBARDED WITH NITROGEN-IONS AT VARIOUS ENERGIES AND ANGLES OF INCIDENCE

Authors
SMIRNOV VK LEPSHIN PA KRIVELEVICH SA KIBALOV DS
Citation
Vk. Smirnov et al., TOPOGRAPHY OF THE SILICON SURFACE BOMBARDED WITH NITROGEN-IONS AT VARIOUS ENERGIES AND ANGLES OF INCIDENCE, Inorganic materials, 34(11), 1998, pp. 1081-1084
Citations number
17
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
34
Issue
11
Year of publication
1998
Pages
1081 - 1084
Database
ISI
SICI code
0020-1685(1998)34:11<1081:TOTSSB>2.0.ZU;2-C
Abstract
The surface composition of silicon irradiated with N-2(+) ions was stu died by Auger electron spectroscopy as a function of the angle of inci dence and ion energy. The bombardment conditions under which ripple fo rmation occurs were determined, and the depth at which ripples begin t o form was evaluated as a function of ion energy in the range 2-10 keV for two angles of incidence. The results obtained are of practical in terest in choosing conditions for SIMS depth profiling of silicon-base d structures.