COIMPLANTATION OF SI AND BE IN SI GAAS FOR IMPROVED DEVICE PERFORMANCE

Authors
DUTT MB NATH R KUMAR R SEN MN KUMAR V
Citation
Mb. Dutt et al., COIMPLANTATION OF SI AND BE IN SI GAAS FOR IMPROVED DEVICE PERFORMANCE, Solid-state electronics, 42(11), 1998, pp. 1905-1910
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
42
Issue
11
Year of publication
1998
Pages
1905 - 1910
Database
ISI
SICI code
0038-1101(1998)42:11<1905:COSABI>2.0.ZU;2-O
Abstract
The effect of co-implantation of Si and Be in GaAs is discussed in the light of tailoring of a MESFET implantation profile. The modified pro file is calculated by considering electrical activation and diffusion of both Si and Be in GaAs. The results compare well with a realized n- layer measured by the C-V technique. Since the pinch-off voltage is a figure of merit of device performance, a calculation of the latter usi ng a tailored implantation profile is also presented in this paper. (C ) 1998 Elsevier Science Ltd. All rights reserved.