FORMATION OF NISI-SILICIDED SHALLOW P(+)N JUNCTIONS BY BF2+ IMPLANTATION INTO THIN NI OR NISI FILMS ON SI SUBSTRATES AND SUBSEQUENT ANNEAL

A low-temperature process scheme for fabricating silicided shallow p()n junctions is described and investigated. The formation scheme is th at BF: ion implantation into thin Ni or NiSi films deposited on a Si s ubstrate and subsequent anneal. An NiSi silicided shallow p(+)n juncti on with a leakage of about 4 nA cm(-2) at -5 V and a forward ideality factor of about 1.01 can be obtained by just annealing the sample with implantation into thin NiSi films at 600 degrees C for 30 min. Accord ingly, an NiSi sheet resistivity of about 22 mu Omega-cm can be obtain ed. Though the sample with implantation into thin Ni films can also le ad to good junction, the silicide is slightly degraded causing an incr ease of resistivity to about 30 mu Omega-cm. For these schemes, rapid thermal annealing is found to be less effective in forming junctions t han conventional furnace annealing. (C) 1998 Published by Elsevier Sci ence Ltd. All rights reserved.