ANALYTICAL MODEL FOR THE THRESHOLD VOLTAGE OF ACCUMULATION CHANNEL MOS-GATE DEVICES

An analytical model for the threshold voltage of Accumulation Channel MOS-Gate devices is developed for the first time in this paper. Using the model, an equation for the threshold Voltage is derived in terms o f the design and fabrication process parameters. The values of the thr eshold voltage predicted by the analytical equation are found to be in excellent agreement with those extracted from numerical simulations a nd experimental measurements on both silicon and silicon carbide devic es. The analysis in this paper is therefore useful in choosing the des ign and fabrication process parameters required to tailor the threshol d voltage of Accumulation Channel MOS-Gate bipolar and unipolar device s. (C) 1998 Elsevier Science Ltd. All rights reserved.