DISPERSIVE DECAY OF POSITIVE OXIDE CHARGE AFTER HIGH-FIELD STRESS

Citation
Yj. Wu et al., DISPERSIVE DECAY OF POSITIVE OXIDE CHARGE AFTER HIGH-FIELD STRESS, Solid-state electronics, 42(11), 1998, pp. 1993-1996
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
42
Issue
11
Year of publication
1998
Pages
1993 - 1996
Database
ISI
SICI code
0038-1101(1998)42:11<1993:DDOPOC>2.0.ZU;2-W
Abstract
The decay of positive oxide charge after high field stress is shown to be a dispersive response by experimental results, which is further su ppressed with increasing negative gate bias, indicating that the ''fre e electrons'' in oxide injected by FN injection have little effect on the discharging. By suitably choosing the time scale and slope scale, all the decay under different biases can be scaled into a single, unif orm curve which indicates that the decay under low field bias can be p redicted from that of high field. (C) 1998 Elsevier Science Ltd. All r ights reserved.