ANALYSIS OF THE FP-JTE PLANAR JUNCTION TERMINATION

Authors
WU ZL GAO YM LIANG SJ LUO JS
Citation
Zl. Wu et al., ANALYSIS OF THE FP-JTE PLANAR JUNCTION TERMINATION, Solid-state electronics, 42(11), 1998, pp. 2097-2100
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
42
Issue
11
Year of publication
1998
Pages
2097 - 2100
Database
ISI
SICI code
0038-1101(1998)42:11<2097:AOTFPJ>2.0.ZU;2-7
Abstract
Analysis and calculation have been performed for a non-punchthrough FP -JTE structure by using the boundary element method. The results show that the breakdown voltage linearly depends on the implantation dose a nd the density of the interface charge, and the field plate can suppre ss the breakdown voltage sensitivity to the interface charge. (C) 1998 Elsevier Science Ltd. All rights reserved.