RTS NOISE DUE TO LATERAL ISOLATION RELATED DEFECTS IN SUBMICRON NMOSFETS

The results of a systematic study of the random telegraph signal (RTS) fluctuations in submicron W-array n metal-oxide semiconductor field-e ffect transistors (nMOSFETs) are presented and analysed. These results include the dependency of the RTS amplitude and of the capture and em ission time constants, measured both in the standard transistor and in the diode configuration, on the gate, drain and substrate voltage. Fo r the latter configuration, the drain-substrate (or source-substrate); diode of the transistor is forward biased. Application of this techni que for measuring RTS noise allows us to distinguish the drain (source ) traps from the well-known channel traps. It is found that besides th e classical channel-related RTSs, another type occurs which is associa ted with lateral isolation related (or edge-related) oxide defects, lo cated near the drain or the source contact. As will be shown, the coul omb blockade significantly affects the capture and emission kinetics o f these defects. The specific properties of such RTSs are studied in d etail, as they may reveal useful information on their identification. (C) 1998 Elsevier Science Ltd. All rights reserved.