STRAIN RELAXATION IN SIGE DUE TO PROCESS-INDUCED DEFECTS AND THEIR SUBSEQUENT ANNEALING BEHAVIOR

Ion implantation and reactive ion etching are known to create defects in silicon which get cured during subsequent annealing operations. In this paper we have reported the annealing behavior of phosphorus impla nted into strained SiGe layer at room temperature. The implantation wa s performed at 155 KeV with a dose of 1 x 10(14)/cm(2) Post implantati on annealing was performed at 600, 700, 800 and 900 degrees C for 10s in a rapid thermal process cm furnace. Annealing behavior of defects g enerated as a consequence of dry etching is also reported. RTP anneali ng on reactive ion etching (RIE) etched samples were performed at 650, 700, 750 and 800 degrees C. I-V, C-V and DLTS measurements hint towar ds the presence of permanent dislocation loops created as a consequenc e of RIE and implantation causing strain relaxation. (C) 1998 Elsevier Science Ltd. All rights reserved.