H. Vanmeer et al., LOW-FREQUENCY DRAIN CURRENT NOISE BEHAVIOR OF INP BASED MODFETS IN THE LINEAR AND SATURATION REGIME, I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2475-2482
This paper describes a detailed experimental study of the low-frequenc
y (LF) drain current noise behavior of InP based MODFET's, in a broad
operation regime, spanning both linear and saturation operation. The n
oise power spectral density Sr, of the predominantly 1/f noise is stud
ied as a function of the gate and drain bias. The experimental noise b
ehavior is compared with available analytical models. It is shown that
there is a reasonable agreement between the data and the theoretical
models in linear operation. However, no accurate theory exists for the
saturation regime. Therefore, an empirical analytical description is
proposed, which provides a good approximation for the measurement data
base. Furthermore, it can be used as a starting point for phase noise
simulations in high-frequency nonlinear circuits.