A C-SWITCH CELL FOR LOW-VOLTAGE AND HIGH-DENSITY SRAMS

We propose a novel static random access memory (SRAM) cell named compl ementary-switch (C-Switch) cell. The proposed SRAM cell features: 1) C -Switch in which an bn-channel bulk transistor and a p-channel TFT are combined in parallel; 2) single-bit-line architecture; 3) gate-all-ar ound TFT (GAT) with large ON-current of mu A order. With these three f eatures, the proposed cell enjoys stability at 1.5 V and is 16% smalle r in size than conventional cells. The C-Switch cell is built with onl y a triple poly-Si and one metal process using 0.3 mu m design rules.