A COMPACT LDD MOSFET I-V MODEL-BASED ON NONPINNED SURFACE-POTENTIAL

Based on nonpinned surface potential concept, in this paper we present a compact single-piece and complete I-V model for submicron lightly-d oped drain (LDD) MOSFET's, The physics-based and analytical model was developed using the drift-diffusion equation and based on the quasi tw o-dimensional (2-D) Poisson equation. The important short-channel devi ce features: drain-induced-barrier-lowering (DIBL), channel-length mod ulation (CLM), velocity saturation, and the parasitic series source an d drain resistances have been included in the model in a physically co nsistent manner. In this model, the LDD region is treated as a bias-de pendent series resistance, and the drain-voltage drop across the LDD r egion has been considered in modeling the DIBL effect. This model is s moothly-continuous, valid in all regions of operation and suitable for efficient circuit simulation. The accuracy of the model has been chec ked by comparing the calculated drain current, conductance and transco nductance with the experimental data.