KINK-FREE POLYCRYSTALLINE SILICON DOUBLE-GATE ELEVATED-CHANNEL THIN-FILM TRANSISTORS

Charactcrization and analysis of a novel double-gate elevated-channel thin-film transistor (ECTFT) fabricated using polycrystalline silicon is reported. The transistor has thin channel and thick source/drain re gions with a double-gate control. Using this structure, the kink effec t in the I-V characteristics of a conventional TFT is completely elimi nated, and leakage current at zero gate bias is reduced by over 15 tim es. The elimination of the kink effect and the significant reduction i n leakage current are obtained due to the reduction in lateral electri c field at the channel/drain junction region. Two-dimensional (2-D) de vice simulations are used to study the electric field reduction mechan ism in the structure. Experimental results on the forward conduction a nd gate transfer characteristics of the structure will also be present ed.