MECHANICAL-STRESS MEASUREMENTS USING MICRO-RAMAN SPECTROSCOPY

Authors
DEWOLF I MAES HE
Citation
I. Dewolf et He. Maes, MECHANICAL-STRESS MEASUREMENTS USING MICRO-RAMAN SPECTROSCOPY, Microsystem technologies, 5(1), 1998, pp. 13-17
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Microsystem technologies → ACNP
ISSN journal
09467076
Volume
5
Issue
1
Year of publication
1998
Pages
13 - 17
Database
ISI
SICI code
0946-7076(1998)5:1<13:MMUMS>2.0.ZU;2-T
Abstract
The application of micro-Raman spectroscopy for measurements of mechan ical stress in silicon microelectronics devices is discussed. The adva ntages and disadvantages of the technique are shown through different examples such as Si3N4 and metal lines, isolation structures and solde r bumps.