MICROCAVITY ENGINEERING BY PLASMA IMMERSION ION-IMPLANTATION

Microcavities formed in silicon wafers by hydrogen or helium plasma im mersion ion implantation possess very interesting properties. The phys ical mechanisms of the initiation and coalescence of the microcavities are described using results generated by combination of microscopic, spectroscopic, and other chemical characterization techniques. We will also review three areas that are of interest to the semiconductor ind ustry: light emission, impurity gettering, and ion-cut. The latest res ults with respect to the fabrication of silicon-on-insulator by the io n-cut technique will also be discussed. (C) 1998 Elsevier Science S.A. All rights reserved.