STUDIES ON THE GROWTH-MECHANISM OF INGAAS DURING CURRENT-CONTROLLED LIQUID-PHASE EPITAXY

A theoretical model based on the diffusion and electromigration of the solute atoms has been developed to understand the growth mechanism du ring current controlled liquid phase epitaxy of InGaAs. In the present study, expressions have been generated using a phase diagram relation ship to determine the composition variation of the solute atoms under different growth conditions. Growth rate and thickness of the epitaxia l layers have been calculated in the absence and presence of convectio n and found to vary as a function of applied current density and growt h period. (C) 1997 Elsevier Science S.A.