STRUCTURAL, OPTICAL AND ELECTRICAL-PROPERTIES OF INDIUM-DOPED CDS0.9SE0.1 THIN-FILMS

Indium doping concentration dependent structural, optical and electric al properties of chemically prepared CdS0.9Se0.1 thin films have been studied and reported in this paper. Structural investigations on these films revealed the polycrystalline nature of the samples with the pre sence of hexagonal phase of CdS0.9Se0.1. The indium doping concentrati on up to 0.05 mol% increases the sample crystallinity. For higher conc entrations of indium, material tends towards amorphous. No appreciable change in 2 theta value with doping concentration has been observed. Optical studies indicated displacement in the absorption edge from 565 to 640 nm with a band to band type of transition. The electrical tran sport properties showed two conduction mechanisms; a high temperature grain boundary limited and a low temperature variable range hopping. B oth the carrier concentration (n) and mobility (mu) have been found to be higher at 0.05 mol% In doping concentration; mobility bring a sens itive function of both temperature and doping concentration. The obser ved grain boundary potential (Phi(B)) is minimum at 0.05 mol% In conce ntration. (C) 1997 Elsevier Science S.A.