BASE RESISTANCE MEASUREMENTS IN HBTS USING BASE-EMITTER REVERSE BIAS BREAKDOWN

Authors
HANINGTON G ASBECK PM
Citation
G. Hanington et Pm. Asbeck, BASE RESISTANCE MEASUREMENTS IN HBTS USING BASE-EMITTER REVERSE BIAS BREAKDOWN, Solid-state electronics, 41(5), 1997, pp. 669-671
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
41
Issue
5
Year of publication
1997
Pages
669 - 671
Database
ISI
SICI code
0038-1101(1997)41:5<669:BRMIHU>2.0.ZU;2-J
Abstract
A method is presented which allows the determination of base resistanc e in AlGaAs/GaAs HBTs through simple d.c. measurements. This technique uses the current-voltage characteristics of the base-emitter junction in the reverse bias breakdown regime. Extracted values of R-B are sho wn to be consistent with values obtained from a.c. microwave technique s, as well as with values computed on the basis of HBT geometry. (C) 1 997 Published by Elsevier Science Ltd.