CREATION AND PASSIVATION OF INTERFACE TRAPS IN IRRADIATED MOS-TRANSISTORS DURING ANNEALING AT DIFFERENT TEMPERATURES

Authors
PEJOVIC M RISTIC G
Citation
M. Pejovic et G. Ristic, CREATION AND PASSIVATION OF INTERFACE TRAPS IN IRRADIATED MOS-TRANSISTORS DURING ANNEALING AT DIFFERENT TEMPERATURES, Solid-state electronics, 41(5), 1997, pp. 715-720
Citations number
34
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
41
Issue
5
Year of publication
1997
Pages
715 - 720
Database
ISI
SICI code
0038-1101(1997)41:5<715:CAPOIT>2.0.ZU;2-V
Abstract
The temperature dependence of the creation and the passivation of inte rface traps in irradiated n-channel MOSFETs during annealing has been investigated. The obtained results show that the creation process is d irectly related to the neutralization of the positive oxide trapped ch arge, and that hydrogen atoms (ions) and water molecules are directly responsible for the creation process and for the passivation process, respectively. A combined hydrogen-water (H-W) model which explains the experimental results is proposed. (C) 1997 Elsevier Science Ltd.