A NEW LATERAL IGBT FOR HIGH-TEMPERATURE OPERATION

The analysis of a new LIGBT with special emphasis on high temperature behaviour is discussed. A comprehensive experimental characterisation of the static characteristics over the temperature range 300-423 K is reported. Two-dimensional (2-D) numerical simulations are used to expl ain the observed behaviour and to get a physical insight into the effe cts of temperature on LIGBT performance. Simulation results show a pec uliar latch-up mechanism in the proposed new modified structure differ ent from the conventional IGBT structure; The novel LIGBT structure, p roposed here, has been compared with LIGBT structures previously repor ted. All these structures have been fabricated. The experimental latch -up current density of the proposed LIGBT is four times higher than in the other fabricated structures at high temperature. The dynamic latc h-up during the LIGBT turn-off process has also been analysed. (C) 199 7 Elsevier Science Ltd.