SUBTHRESHOLD MESFET EMPIRICAL-MODEL

Authors
ZHANG WH ANDRE C SALAMA T
Citation
Wh. Zhang et al., SUBTHRESHOLD MESFET EMPIRICAL-MODEL, Solid-state electronics, 41(5), 1997, pp. 781-783
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
41
Issue
5
Year of publication
1997
Pages
781 - 783
Database
ISI
SICI code
0038-1101(1997)41:5<781:SME>2.0.ZU;2-B
Abstract
An empirical modification of the large-signal GaAs MESFET TOM model is presented. The modified model gives an accurate prediction of the I-V characteristics below and above pinch-off and extends the application of the model to the subthreshold region. (C) 1997 Elsevier Science Lt d.