16-MEGABIT DYNAMIC RANDOM-ACCESS MEMORY TRENCH DEPTH CHARACTERIZATIONUSING 2-DIMENSIONAL DIFFRACTION ANALYSIS

Authors
HATAB ZR MCNEIL JR NAQVI SSH
Citation
Zr. Hatab et al., 16-MEGABIT DYNAMIC RANDOM-ACCESS MEMORY TRENCH DEPTH CHARACTERIZATIONUSING 2-DIMENSIONAL DIFFRACTION ANALYSIS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 174-182
Citations number
34
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
2
Year of publication
1995
Pages
174 - 182
Database
ISI
SICI code
1071-1023(1995)13:2<174:1DRMTD>2.0.ZU;2-E