Sk. Ramasesha et al., EFFECT OF PRESSURE ON DIELECTRIC AND FERROELECTRIC PROPERTIES OF BISMUTH VANADATE, Materials chemistry and physics, 48(2), 1997, pp. 136-139
Dielectric constant and dielectric loss studies have been made on poly
crystalline (with both random and partial grain orientation) and singl
e-crystal samples of Bi2VO5.5. Both the dielectric constant and the di
electric loss decrease with increasing pressure for all the samples, a
lthough the decrease is appreciable in the case of partially grain ori
ented samples. On application of moderate pressures, unpoled single cr
ystals exhibit ferroelectric hysteresis loops very similar to that of
the electrically poled single crystals at room pressure. Similar behav
iour has been observed in the case of random and partially grain orien
ted polycrystalline samples. Beyond about 2 GPa, the samples do not ex
hibit normal ferroelectric hysteresis loops.