ELECTRICAL-PROPERTIES OF BLUE-GREEN DIODE-LASERS

Authors
FAN Y GRILLO DC RINGLE MD HAN J HE L GUNSHOR RL SALOKATVE A JEON H HOVINEN M NURMIKKO AV HUA GC OTSUKA N
Citation
Y. Fan et al., ELECTRICAL-PROPERTIES OF BLUE-GREEN DIODE-LASERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2480-2483
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
4
Year of publication
1994
Pages
2480 - 2483
Database
ISI
SICI code
1071-1023(1994)12:4<2480:EOBD>2.0.ZU;2-G
Abstract
In this paper we report the implementation of low resistance ohmic con tacts to p-type ZnSSe and ZnMgSSe which involves the injection of hole s from heavily doped ZnTe into an adjacent alloy layer(s) via graded b and gap regions. Temperature-dependent Hall effect measurements on nit rogen-doped Zn(S,Se) and (Zn,Mg)(S,Se) were performed and the activati on energy of nitrogen acceptors was obtained. With the use of this gra ded contact, room-temperature continuous-wave laser diode operation ha s been achieved at a threshold voltage of 5.8 V in a ZnCdSe/ZnSSe/ZnMg SSe separate confinement heterostructure.