OPTIMIZATION OF CONTACTS AND MOBILITIES FOR (001) ORIENTED 2-DIMENSIONAL HOLE GASES

Authors
CHENG TS JOHNSTON D MIDDLETON J STRICKLAND K HUGHES OH HARRIS JJ FOXON CT MELLOR CJ
Citation
Ts. Cheng et al., OPTIMIZATION OF CONTACTS AND MOBILITIES FOR (001) ORIENTED 2-DIMENSIONAL HOLE GASES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2621-2624
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
4
Year of publication
1994
Pages
2621 - 2624
Database
ISI
SICI code
1071-1023(1994)12:4<2621:OOCAMF>2.0.ZU;2-#
Abstract
A series of conventional and novel (AlGa)As/GaAs two-dimensional hole gas (2DHG) structures have been grown on (001) oriented surfaces. The samples were grown following an identical growth regime so as to rende r them comparable. The effects of variation in spacer layer width, gro wth interruption at the (AlGa)As/GaAs interface, variation in continuo us and delta-doped beryllium density and of the subsequent contacting procedures, together with the use of As2 instead of As4 during growth, have been studied. The results are compared with theoretical analysis and an improved procedure for producing and contacting high mobility 2DHGs is described.