IN-SITU STUDY OF EPITAXIAL COSI2 SI(111) BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY/

Authors
SIRRINGHAUS H LEE EY VONKANEL H
Citation
H. Sirringhaus et al., IN-SITU STUDY OF EPITAXIAL COSI2 SI(111) BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2629-2633
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
4
Year of publication
1994
Pages
2629 - 2633
Database
ISI
SICI code
1071-1023(1994)12:4<2629:ISOECS>2.0.ZU;2-6
Abstract
We have performed in situ ballistic-electron-emission microscopy (BEEM ) and spectroscopy (BEES) at 77 K on epitaxial CoSi2/Si(111) films gro wn by molecular bearn epitaxy. The transport in the silicide was found to be essentially ballistic. With the help of atomic-resolution scann ing tunneling microscopy it has been found that the BEEM current depen ds significantly on the surface electronic structure. On strain-relaxe d layers, hot electron scattering at individual interfacial dislocatio ns has been observed for the first time by BEEM. Apart from the surfac e- and dislocation-induced contrast variations, the BEEM current is ge nerally homogeneous.