A. Garcia et Je. Northrup, 1ST-PRINCIPLES STUDY OF ZN-STABILIZED AND SE-STABILIZED ZNSE(100) SURFACE RECONSTRUCTIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2678-2683
We have carried out first-principles pseudopotential calculations to s
tudy the formation energies of various ZnSe(100) surface reconstructio
ns. Both Zn- and Se-terminated models are treated, using as a guide th
e satisfaction of the electron counting rule (i.e., charge compensatio
n at the surface by the filling of all the Se dangling bonds and the e
mptying of the Zn dangling bonds). In order to treat structures with d
ifferent stoichiometries, we determine the surface energy as a functio
n of the Zn chemical potential, which is allowed to vary in a range de
termined by the energies of bulk Zn, Se, and ZnSe. A c(2 X 2) reconstr
uction with half-monolayer coverage of twofold coordinated Zn atoms is
stable in the Zn-rich limit. Under moderately Se-rich conditions, the
surface adopts a (2 X 1) Se-dimer phase. In the extreme Se-rich limit
we predict the stability of a reconstruction with one and a half mono
layer coverage of Se. The new structure can account for the high growt
h rates observed in atomic layer epitaxy and migration enhanced epitax
y experiments at relatively low temperatures.