MATERIALS AND FAILURE ANALYSIS-METHODS AND SYSTEMS USED IN THE DEVELOPMENT AND MANUFACTURE OF SILICON INTEGRATED-CIRCUITS

The trends within the electronic industry toward decreasing device dim ension and increasing integrated circuit device density are driving de velopments in analytical technology. The lateral resolution and sensit ivity of present generation analytical equipment are challenged by dev ice feature dimensions. In addition, acceptable contamination levels a re decreasing. Some of the analysis methods facing this challenge are total reflection x-ray fluorescence, ellipsometry, Auger microprobe, a nd secondary-ion-mass spectrometry. Networked analytical systems are p resently used to improve cycle time for analysis. This type of system allows a focused ion beam tool or a scanning electron microscope to qu ickly move to previously located electrically active defect. The focus of this presentation will be on the challenges facing materials chara cterization and failure analysis methods. The discussion will include the effect of networked analytical systems on both problem solving met hodology and the potential role of new characterization methods such a s heavy-ion backscattering spectrometry and post-ionization of sputter ed neutrals.