DRY PHOTOCHEMICAL SELECTIVE ETCHING OF INGAAS INALAS IN HBR GAS-USINGA 172-NM EXCIMER LAMP/

Authors
HABIBI S TOTSUKA M TANAKA J KINOSHITA T MATSUMOTO S IIDA S
Citation
S. Habibi et al., DRY PHOTOCHEMICAL SELECTIVE ETCHING OF INGAAS INALAS IN HBR GAS-USINGA 172-NM EXCIMER LAMP/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 247-252
Citations number
19
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
2
Year of publication
1995
Pages
247 - 252
Database
ISI
SICI code
1071-1023(1995)13:2<247:DPSEOI>2.0.ZU;2-L