OPTIMIZATION OF INTERFACES IN INGAAS INP HETEROSTRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/

Authors
MOZUME T KASHIMA H HOSOMI K OUCHI K SATO H MASUDA H TANOUE T OHBU I
Citation
T. Mozume et al., OPTIMIZATION OF INTERFACES IN INGAAS INP HETEROSTRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 276-280
Citations number
18
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
2
Year of publication
1995
Pages
276 - 280
Database
ISI
SICI code
1071-1023(1995)13:2<276:OOIIII>2.0.ZU;2-9