STUDY ON PROPERTY VARIATION DUE TO THE INTERFACE BETWEEN PZT AND ELECTRODE

The ferroelectric capacitors are fabricated using RuO2/Pt electrode to examine the electrode effect on ferroelectric properties. PZT films a re prepared by metalorganic decomposition (MOD) on sputter deposited e lectrodes. In particular, inductively coupled plasma(ICP) etcher is us ed to minimize the etching damage. In addition, TiO2 reaction barrier layer is also employed to retard the degradation of ferroelectric prop erties due to the reaction between a passivation layer and PZT film. T he better hysteretic properties were obtained from Pt/RuO2/PZT/RuO2/Pt ferroelectric capacitors. The enhancement of ferroelectric properties is likely attributed to the modification in the microstructure of PZT film. The interfacial modification would be affected by the factors s uch as surface roughness, stress, and porosity of RuO2 film. The resul t implies RuO2/Pt would be a good electrode for a nonvolatile memory a pplication.