PT TIN ELECTRODES FOR STACKED MEMORY WITH POLYSILICON PLUG UTILIZING PZT FILMS/

Authors
KUSHIDAABDELGHAFAR K HIRATANI M TORII K FUJISAKI Y
Citation
K. Kushidaabdelghafar et al., PT TIN ELECTRODES FOR STACKED MEMORY WITH POLYSILICON PLUG UTILIZING PZT FILMS/, Integrated ferroelectrics, 13(1-3), 1996, pp. 405-411
Citations number
11
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
13
Issue
1-3
Year of publication
1996
Pages
405 - 411
Database
ISI
SICI code
1058-4587(1996)13:1-3<405:PTEFSM>2.0.ZU;2-L
Abstract
The mechanism of TiN barrier metal oxidation of Pt/TiN electrodes are investigated for planarized stacked memory utilizing lead zirconate ti tanate (PZT). Thinner (<100 nm) and highly oriented platinum films are required in gigabit scale ferroelectric nonvolatile memories whose ca pacitor size is comparable to PZT grain size. Oxygen diffusivity to ox idize TiN is Found to depend on the PI Nm thickness. In cross-sectiona l TEM images of PZT/Pt/TiN/Si, titanium oxide is observed beneath the Pt grain boundary. The oxygen is diffused through the Pt grain boundar y under heat treatment in an oxygen atmosphere for crystallization of PZT films, and oxidizes the underlying TiN barrier metal.