Dh. Kwak et al., HYSTERESIS ANALYSIS IN CAPACITANCE-VOLTAGE CHARACTERISTICS OF PT (BA,SR)TIO3/PT STRUCTURES/, Integrated ferroelectrics, 13(1-3), 1996, pp. 413-419
Capacitance-Voltage (C-V) characteristics of Pt/(Ba, Sr)TiO3/Pt MIM ca
pacitor were investigated. Hysteresis observed in the C-V characterist
ics of BST films was analyzed. The dependence of the C-V characteristi
cs on the sweeping direction of applied voltage indicates that the hys
teresis is caused by the interface trap charge between the BST film an
d the Pt electrode. A new method was proposed to characterize the inte
rface traps from the hysteresis of C-V characteristics of MIM capacito
r. The trapped electron density near the lower interface of the BST th
in films was constant (similar to 3 x 10(12) cm(-2)) for all the film
thickness ranging from 500 Angstrom to 2000 Angstrom, which suggests t
hat the hysteresis is not caused by the bulk property of the BST film
bur caused by the interfacial property.