GROWTH OF HIGH-MOBILITY INSB CRYSTALS

Experiments on the growth of high-mobility Te-doped n-type InSb and un doped p-type InSb crystals by vertical directional solidification are reported. Hall mobility of the Te-doped crystals is 26 000 cm(2)/V.s a nd of the undoped crystals 42 000 cm(2)/V.s at 300 K. The Hall coeffic ient of Te-doped samples is negative over the entire temperature range , but the Hall coefficient of the undoped samples is positive at low t emperature, and changes sign at higher temperatures.