FERROELECTRIC NONVOLATILE MEMORY TECHNOLOGY - APPLICATIONS AND INTEGRATION CHALLENGES

Challenges in the integration of ferroelectric nonvolatile memories wi th complementary metal-oxide-semiconductor (CMOS) technology for low-v oltage and low-power applications are discussed, The main driving forc e for commercialization is to take advantage of the true high-speed (1 00 ns), low-voltage (0.9 V) write potential of ferroelectric memories, The operation of ferroelectric nonvolatile memories and different int egration approaches are discussed, Specifically, our effort in integra ting SrBi2Ta2O9 ferroelectrics with CMOS are reviewed, For the first t ime, ferroelectric capacitor and CMOS transistor properties after inte gration through metallization are presented.