APPLICATION OF THE FOCUSED ION-BEAM TECHNIQUE TO THE DIRECT FABRICATION OF VERTICAL-TYPE FIELD EMITTERS

ISHIKAWA J OHTAKE T GOTOH Y TSUJI H FUKAYAMA N INOUE K NAGAMACHI S YAMAKAGE Y UEDA M MARUNO H ASARI M

J. Ishikawa et al., APPLICATION OF THE FOCUSED ION-BEAM TECHNIQUE TO THE DIRECT FABRICATION OF VERTICAL-TYPE FIELD EMITTERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 452-455

10

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP

10711023

13

2

1995

452 - 455

ISI

1071-1023(1995)13:2<452:AOTFIT>2.0.ZU;2-X