EFFECTS OF OXYGEN FLOODING ON SPUTTERING AND IONIZATION PROCESSES DURING ION-BOMBARDMENT

Authors
TIAN C VANDERVORST W
Citation
C. Tian et W. Vandervorst, EFFECTS OF OXYGEN FLOODING ON SPUTTERING AND IONIZATION PROCESSES DURING ION-BOMBARDMENT, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 452-459
Citations number
27
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
15
Issue
3
Year of publication
1997
Part
1
Pages
452 - 459
Database
ISI
SICI code
0734-2101(1997)15:3<452:EOOFOS>2.0.ZU;2-1
Abstract
The effects of oxygen flooding on the sputter and ionization yield of Si and SiO2 have been investigated. Additional processes in sputtering and ionization may be introduced by oxygen flooding beyond a simple c hemical adsorption and knock-on process, leading to a larger reduction in sputter yield and a further enhancement in ionization yield for si licon sputtered from a Si substrate as compared to the values for sili con dioxide. A transient, particularly for the sputter yield, still re mains, implying that the transient reduction is not as complete as des ired. (C) 1997 American Vacuum Society.