SCANNING-TUNNELING-MICROSCOPY STUDIES OF STRAIN RELAXATION AND MISFITDISLOCATIONS IN INAS LAYERS GROWN ON GAAS(110) AND GAAS(111)A

Authors
BELK JG SUDIJONO JL YAMAGUCHI H ZHANG XM PASHLEY DW MCCONVILLE CF JONES TS JOYCE BA
Citation
Jg. Belk et al., SCANNING-TUNNELING-MICROSCOPY STUDIES OF STRAIN RELAXATION AND MISFITDISLOCATIONS IN INAS LAYERS GROWN ON GAAS(110) AND GAAS(111)A, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 915-918
Citations number
17
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
15
Issue
3
Year of publication
1997
Part
1
Pages
915 - 918
Database
ISI
SICI code
0734-2101(1997)15:3<915:SSOSRA>2.0.ZU;2-S
Abstract
Strain relaxation during the growth of InAs thin films on GaAs substra tes by molecular beam epitaxy has been studied by scanning tunneling m icroscopy (STM). A two-dimensional growth mode operates for InAs layer s grown on both GaAs(110) and GaAs(111)A. Detailed STM profiles of the InAs surfaces reveal small relaxation phenomena that are related to t he presence of misfit dislocations at the buried heterointerface. The origin of these surface features is discussed, and their utility in st udying the relaxation of strained semiconductor thin films is demonstr ated. (C) 1997 American Vacuum Society.