SIGE GE HETEROJUNCTION INFRARED DETECTOR

Authors
JIANG RL GU SL JIANG N LI Z XU J ZHU SM HU LQ ZHENG YD
Citation
Rl. Jiang et al., SIGE GE HETEROJUNCTION INFRARED DETECTOR, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 968-970
Citations number
10
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
15
Issue
3
Year of publication
1997
Part
1
Pages
968 - 970
Database
ISI
SICI code
0734-2101(1997)15:3<968:SGHID>2.0.ZU;2-U
Abstract
Novel SiGe/Ge heterojunction infrared detectors have, for the first ti me, been fabricated with Si1-xGex-Si heterostructures epitaxially grow n on Ge substrates by rapid thermal process/very low pressure-chemical vapor deposition. The peak value of the spectrum response ranges from 1.3 to 1.55 mu m. The responsivity at 1.55 mu m is higher than 0.7 A/ W at zero bias. The dark current density is as low as 4 x 10(-7) A/mm( 2) at -5 V. (C) 1997 American Vacuum Society.