REACTIONS OF DIETHYLGERMANE, TRIETHYLGERMANE, AND ETHYL GROUPS ON GE(100)

The adsorption and decomposition of diethylgermane and triethylgermane on the Ge(100) surface are investigated. These molecules are potentia l Ge sources for the deposition of epitaxial Ge thin films. Room tempe rature adsorption of either ethylgermane leads to the formation of sur face germanium hydrides and ethyl groups. The ethyl groups decompose a t higher temperatures and form ethylene via a beta-hydride elimination reaction. Isotopic labeling experiments are used to confirm this reac tion step. This is in contrast to the Si(100) surface where both alpha and beta-hydride elimination is observed for the decomposition of sur face ethyl groups. Low energy electron diffraction is used to evaluate the quality of the deposited germanium films. (C) 1997 American Vacuu m Society.