ADSORPTION OF N2H4 ON SILICON SURFACES

The chemistry of N2H4 on Si(100)2X1 and Si(111)7X7 has been studied us ing scanning tunneling microscopy (STM). On Si(100), the STM images sh ow that the predominant pathway for adsorption is across the silicon d imers with the N-N bond parallel to the surface. On Si(111)7X7, the mo lecule behaves in a manner which is similar to NH3. That is, at low co verages the molecule adsorbs preferentially at center adatoms due to t he greater reactivity of these sites, while at higher coverages it als o reacts with the corner adatoms. (C) 1997 American Vacuum Society.