SCANNING TUNNELING MICROSCOPE STUDY OF SB SI(111)-5-ROOT-3X5-ROOT-3 STRUCTURE/

We have investigated Sb overlayer structures on Si(111) with low energ y electron diffraction and scanning tunneling microscope (STM). The Sb /Si(111)-5 root 3 X 5 root 3 structure was constructed via the desorpt ion of Sb from the saturated 2 X 1 surface at elevated temperature (70 0-750 degrees C). Its atomic structure and formation process were exte nsively studied with STM images, considering the structural stability. This Sb structure could be described in terms of the site selective r eplacement of outermost Si atoms with Sb atoms in the dimer-adatom-sta cking fault 5 X 5 structure, which is generated by both the saturation of dangling bends and strain due to the large lattice mismatch. (C) 1 997 American Vacuum Society.